dual igbt nx-series module 450 amperes/1700 volts CM450DX-34SA 1 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 04/13 rev. 0 description: powerex igbt modules are designed for use in switching applications. each module consists of two igbt transistors in a half-bridge configuration with each transistor having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control motion/servo control photovoltaic/fuel cell ordering information: example: select the complete module number you desire from the table below -i.e. CM450DX-34SA is a 1700v (v ces ), 450 ampere dual igbt power module. type current rating v ces amperes volts (x 50) cm 450 34 outline drawing and circuit diagram dimensions inches millimeters aa 0.90.012 22.860.3 ab 0.22 dia. 5.5 dia. ac 1.970.02 50.00.5 ad 2.26 57.5 ae 0.15 3.75 af m6 m6 ag 0.28 7.0 ah 0.14 3.5 aj 0.03 0.8 ak 0.81 20.5 al 0.70 17.0 am 0.12 3.0 an 0.65 16.5 ap 0.49 12.5 aq 0.18 4.5 ar 0.102 dia. 2.6 dia. as 0.089 dia. 2.25 dia. at 0.05 1.2 au 0.03 0.65 av 0.05 1.15 aw 0.54 13.7 ax 0.52 13.0 ay 0.285 7.25 dimensions inches millimeters a 5.98 152.0 b 2.44 62.0 c 0.67+0.04/-0.02 17.0+1.0/-0.5 d 5.39 137.0 e 4.79 121.7 f 4.330.02 110.00.5 g 3.72 94.5 h 0.60 15.14 j 0.53 13.5 k 0.31 7.75 l 1.330.012 33.910.3 m 2.28 0.012 57.95 0.3 n 1.54 39.0 p 0.87 22.0 q 0.017 0.012 0.45 0.3 r 0.55 14.0 s 0.47 12.0 t 0.24 6.0 u 0.31 8.0 v 0.26 6.5 w 0.62 15.64 x 0.28 0.012 7.24 0.3 y 0.15 3.81 z 1.95 0.012 49. 53 0.3 g2(8) tr 2 tr 1 di2 di1 es2(9) e2 (10) c1 (11) c2e1 (7) c2e1 (6) th th1 (1) th2 (2) g1(3) cs1(5) es1(4) ntc a d e f j ar z aa ay b ah aj y al am am ak ag ae ad ac as an aq aq ag at k aw ax aw ae 45 au av ap g l h p c x t s r r q n v u w ab (4 places) af (4 places) m k y y y detail "b" detail "b" detail "c" detail "a" detail "c" detail "a" 1 2 3 4 5 6 7 8 9 10 11 tolerance otherwise specified (mm) the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 2 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1700 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 125c) *2 i c 300 amperes collector current (pulse) *3 i c 450 amperes collector current (v ge = 15v , pulse, repetitive) *3 i crm 900 amperes total power dissipation (t c = 25c) *2,*4 p tot 3000 watts emitter current (t c = 25c) *2,*4 i e *1 300 amperes emitter current (pulse) *3 i e *1 450 amperes emitter current (pulse, t c = 25c) *2,*4 i erm *1 900 amperes maximum junction temperature t j(max) 175 c maximum case temperature *2 t c(max) 125 c operating junction temperature t j(op) -40 to +150 c storage temperature t stg -40 to +125 c isolation voltage (terminals to baseplate, rms, f = 60hz, ac 1 minute) v iso 4000 volts *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. 21.2 0 tr1, tr2: igbt, di1, di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 27.8 37.7 41.9 78.8 92.7 tr 2 23.0 32.4 35.4 46.4 di2 tr 2 di2 tr 1 tr 1 di1 di1 label side
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 3 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 45ma, v ce = 10v 5.4 6.0 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 450a, v ge = 15v, t j = 25c *5 2.4 3.05 volts (terminal) i c = 450a, v ge = 15v, t j = 125c *5 2.9 volts i c = 450a, v ge = 15v, t j = 150c *5 3.0 volts collector-emitter saturation voltage v ce(sat) i c = 450a, v ge = 15v, t j = 25c *5 2.25 2.9 volts (chip) input capacitance c ies 79 nf output capacitance c oes v ce = 10v, v ge = 0v 8 nf reverse transfer capacitance c res 1.36 nf gate charge q g v cc = 1000v, i c = 450a, v ge = 15v 1656 nc turn-on delay time t d(on) 300 600 ns rise time t r v cc = 1000v, i c = 450a, v ge = 15v, 120 240 ns turn-off delay time t d(off) r g = 1.2?, inductive load 350 700 ns fall time t f 120 240 ns emitter-collector voltage v ec *1 i e = 450a, v ge = 0v, t j = 25c *5 5.05 6.25 volts (terminal) i e = 450a, v ge = 0v, t j = 125c *5 3.8 volts i e = 450a, v ge = 0v, t j = 150c *5 3.6 volts emitter-collector voltage v ec *1 i e = 450a, v ge = 0v, t j = 25c *5 4.90 6.10 volts (chip) reverse recovery time t rr *1 v cc = 1000v, i e = 450a, v ge = 15v 100 200 ns reverse recovery charge q rr *1 r g = 1.2?, inductive load 90 c turn-on switching energy per pulse e on v cc = 1000v, i c = i e = 450a, 80 mj turn-off switching energy per pulse e off v ge = 15v, r g = 1.2?, 98 mj reverse recovery energy per pulse e rr *1 t j = 150c, inductive load 61 mj internal lead resistance r cc' + ee' main terminals-chip, 2.0 m? per switch,t c = 25c *2 internal gate resistance r g per switch 1.7 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling diode (fwdi). *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 21.2 0 tr1, tr2: igbt, di1, di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 27.8 37.7 41.9 78.8 92.7 tr 2 23.0 32.4 35.4 46.4 di2 tr 2 di2 tr 1 tr 1 di1 di1 label side
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 4 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *2 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c, r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *6 3375 k power dissipation p 25 t c = 25c *2 10 mw thermal resistance characteristics thermal resistance, junction to case *2 r th(j-c) q per inverter igbt 0.05 k/w thermal resistance, junction to case *2 r th(j-c) d per inverter fwdi 0.08 k/w contact thermal resistance, r th(c-f) thermal grease applied 15 k/kw case to heatsink *2 (per 1 module) *7 mechanical characteristics mounting torque m t mounting to heatsink , m6 screw 31 35 40 in-lb m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 17.0 mm terminal to baseplate 10.0 mm clearance d a terminal to terminal 17.5 mm terminal to baseplate 10.0 mm weight m 330 grams flatness of baseplate e c on centerline x, y *8 0 +1 00 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across c1-e2 1000 1200 volts gate (-emitter drive) voltage v ge(on) applied across g1-es1 / g2-es2 14.0 15.0 16.5 volts external gate resistance r g per switch 1.2 27 ? *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *6 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. 21.2 0 tr1, tr2: igbt, di1, di2: fwdi, th: ntc thermistor each mark points to the center position of each chip. th 0 27.8 37.7 41.9 78.8 92.7 tr 2 23.0 32.4 35.4 46.4 di2 tr 2 di2 tr 1 tr 1 di1 di1 label side ? : concave + : convex ? : concave x y + : convex mounting side mounting side mounting side
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 5 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com emitter current, i e , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts) collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) 0 1 3 6 5 2 4 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (inverter part - typical) 10 2 10 3 collector current, i c , (amperes) collector-emitter saturation voltage characteristics (inverter part - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 collector-emitter voltage, v ce , (volts) output characteristics (inverter part - typical) 0 2 4 6 8 10 0 900 100 200 400 500 300 600 800 700 collector current, i c , (amperes) 4.5 3.5 3.0 4.0 0 2.0 2.5 1.0 1.5 0.5 0 400 500 600 800 700 900 100 200 300 t j = 25c t j = 25 c collector-emitter saturation voltage characteristics (inverter part - typical) t j = 25c t j = 125c t j = 150c t j = 25c t j = 125c t j = 150c i c = 600a i c = 450a i c = 180a v ge = 20v 10 11 8 9 15
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 6 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com capacitance, c ies , c oes , c res , (nf) switching time, (ns) switching time, (ns) switching time, (ns) collector-emitter voltage, v ce , (volts) capacitance vs. v ce (inverter part - typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 -1 10 1 10 -1 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 0 10 1 10 2 10 2 10 0 10 1 half-bridge switching characteristics (inverter part - typical) 10 3 collector current, i c , (amperes) 10 4 10 3 10 1 10 2 10 2 10 0 10 1 half-bridge switching characteristics (inverter part - typical) 10 3 external gate resistance, r g , (?) 10 4 10 3 10 2 10 1 switching time vs. gate resistance (inverter part - typical) v ge = 0v c ies c oes c res t d(off) t d(on) t r t f t d(off) t d(on) t r v cc = 1000v v ge = 15v r g = 1.2 t j = 125c inductive load v cc = 1000v v ge = 15v r g = 1.2 t j = 150c inductive load t f t d(off) t d(on) t r v cc = 1000v v ge = 15v i c = 450a t j = 125c inductive load t f
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 7 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com gate charge, q g , (nc) gate charge vs. v ge (inverter part) 20 0 16 12 8 4 0 500 1500 2000 2500 1000 emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 2 10 1 10 3 emitter current, i e , (amperes) reverse recovery characteristics (inverter part - typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 1 10 0 10 2 external gate resistance, r g , (?) 10 4 10 3 10 2 10 1 switching time vs. gate resistance (inverter part - typical) switching time, (ns) gate-emitter voltage, v ge , (volts) reverse recovery, i rr (a), t rr (ns) reverse recovery, i rr (a), t rr (ns) i c = 450a v cc = 1000v v cc = 1000v v ge = 15v r g = 1.2 t j = 125c inductive load i rr t rr v cc = 1000v v ge = 15v r g = 1.2 t j = 150c inductive load i rr t rr t d(off) t d(on) t r v cc = 1000v v ge = 15v i c = 450a t j = 150c inductive load t f
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 8 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) switching energy, e on , e off , (mj) reverse recovery energy, e rr , (mj) gate resistance, r g , (?) half-bridge switching characteristics (inverter part - typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 1 10 2 10 3 half-bridge switching characteristics (inverter part - typical) collector current, i c , (amperes) emitter current, i e , (amperes) 10 1 10 2 10 3 10 1 10 0 10 2 10 1 10 0 10 2 half-bridge switching characteristics (inverter part - typical) gate resistance, r g , (?) 10 3 10 2 10 1 10 3 10 2 10 1 half-bridge switching characteristics (inverter part - typical) reverse recovery energy, e rr , (mj) reverse recovery energy, e rr , (mj) 10 3 10 1 10 0 10 2 10 2 10 1 10 0 10 -1 10 3 10 1 10 0 10 2 10 2 10 1 10 0 10 -1 v cc = 1000v v ge = 15v i c = 450a t j = 150c inductive load v cc = 1000v v ge = 15v r g = 1.2 t j = 150c inductive load e on e off e rr v cc = 1000v v ge = 15v r g = 1.2 t j = 125c inductive load e on e off e rr e on e off e rr e on e off e rr v cc = 1000v v ge = 15v i c = 450a t j = 125c inductive load
CM450DX-34SA dual igbt nx-series module 450 amperes/1700 volts 9 04/13 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com time, (s) transient thermal impedance characteristics (inverter part - maximum) 10 0 10 -1 10 -2 10 -3 10 -5 10 -3 10 -4 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) normalized transient thermal impedance, z th(j-c') single pulse t c = 25c per unit base = r th(j-c) = 0.05 k/w (igbt) r th(j-c) = 0.08 k/w (fwdi)
|
